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AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT

Shenzhen Hongxinwei Technology Co., Ltd
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AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT

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Brand Name : Infineon

Model Number : AUIRG4PH50S

Certification : ROHS

Place of Origin : TAIWAN

MOQ : 10PCS

Price : NEGOTIABLE

Payment Terms : T/T, Western Union

Supply Ability : 10000PCS/WEEK

Delivery Time : 2-3DAYS

Packaging Details : 400PCS/BOX TUBE

Product Category : IGBT Transistors

Technology : Si

Mounting Style : Through Hole

Configuration : Single

Collector- Emitter Voltage VCEO Max : 1.2 kV

Collector-Emitter Saturation Voltage : 1.47 V

Maximum Gate Emitter Voltage : - 20 V, + 20 V

Continuous Collector Current at 25 C : 141 A

Pd - Power Dissipation : 543 W

Minimum Operating Temperature : - 55 C

Maximum Operating Temperature : + 150 C

Height : 20.7 mm

Length : 15.87 mm

Width : 5.31 mm

Factory packaging quantity : 400PCS/BOX

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AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT

1.FEATURES

Standard: Optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
• Industry standard TO-247AC package
• Lead-Free
• Automotive Qualified *

2.BENEFITS

Generation 4 IGBT's offer highest efficiency available

IGBT's optimized for specified application conditions

AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT


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AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT Images

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